LAB16 - MiniMess

Widebandgap semiconductors such as GaN and SiC transistors, which are used for example in the power electronics of modern electric vehicles, achieve switching times in the single-digit nano-second range. This allows compact converters to be designed with power densities of tens of kW per liter. A more accurate characterization of these transistors is needed to further increase the power density and optimize the multidimensional design of the system. In addition, a minimally invasive and robust measurement technique is needed both during commissioning and subsequent system characterization, as well as in the verification of logic circuits in the area of predictive control.

Aim, approach and benefit

The aim of the project is to acquire a minimally invasive measurement bench for time-domain characterization of scalable, high-efficiency & fast-switching power electronics with predictive control for electromobility.

For this purpose, an oscilloscope with six channels and a bandwidth of 2.5 GHz will be purchased. This, in combination with optically isolated probes (bandwidth 1-1.5 GHz, up to ±2.5 kV, common-mode rejection of at least 80 dB over the entire bandwidth), will enable both minimally invasive measurement of fast transients in widebandgap semiconductor characterization and measurement of logic signals in EMC-stressed environments. Furthermore, three-phase and multi-level systems can be investigated in detail, which is not possible with classical measurement systems (passive or differential probes). The measurement system can be used in the field of power electronics for electromobility or industry, as well as in the field of logic circuits (AI, AI in control).